| PART |
Description |
Maker |
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 1SS367 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| ZUMD54 ZUMD54C |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
ZETEX[Zetex Semiconductors]
|
| SSM6G18NU |
Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| 1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| MA3ZD12W |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| DSR05S30CTB |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| SCS40STN |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SDB412WS |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| RKD705WKKRP RKD705WKKRH |
Silicon Epitaxial Schottky Barrier Diode for Detector
|
Renesas Electronics Corporation
|
| HN20S01F |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
